Title :
Thin Gate Oxide Reliability Study Using Nano-Scaled Stress
Author :
Wu, Y.L. ; Hwang, C.Y. ; Liang, C.H. ; Lin, S.T. ; Liou, J.J.
Author_Institution :
Nat. Chi Nan Univ., Taipei
Abstract :
By taking advantages of small contact area of conductive atomic force microscopy (CAFM) and the powerful measurement capability of Agilent 4156C, we applied nano-scaled stresses to oxide samples and measured their breakdown characteristics. We report in this paper the application of nano-scaled stresses to thin gate oxide through CAFM probe tip for gate oxide reliability study including the post-breakdown current conduction of thin oxide, the bias-annealing effect on post-irradiated samples and the breakdown statistical distribution by using the CAFM in conjunction with the Agilent 4156C.
Keywords :
MIS devices; atomic force microscopy; electric breakdown; semiconductor device reliability; statistical distributions; Agilent 4156C; bias-annealing effect; conductive atomic force microscopy; nanoscaled stress; post-breakdown current conduction; statistical distribution; thin gate oxide reliability; Area measurement; Atomic force microscopy; Atomic measurements; Breakdown voltage; Carbon capture and storage; Conductivity measurement; Electric breakdown; Electric variables measurement; Force measurement; Stress measurement;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
Conference_Location :
Tainan
Print_ISBN :
978-1-4244-0637-1
Electronic_ISBN :
978-1-4244-0637-1
DOI :
10.1109/EDSSC.2007.4450056
