Thin Gate Oxide Reliability Study Using Nano-Scaled Stress

Author

Wu, Y.L. ; Hwang, C.Y. ; Liang, C.H. ; Lin, S.T. ; Liou, J.J.

Author_Institution

Nat. Chi Nan Univ., Taipei

fYear

2007

fDate

20-22 Dec. 2007

Firstpage

37

Lastpage

40

Abstract

By taking advantages of small contact area of conductive atomic force microscopy (CAFM) and the powerful measurement capability of Agilent 4156C, we applied nano-scaled stresses to oxide samples and measured their breakdown characteristics. We report in this paper the application of nano-scaled stresses to thin gate oxide through CAFM probe tip for gate oxide reliability study including the post-breakdown current conduction of thin oxide, the bias-annealing effect on post-irradiated samples and the breakdown statistical distribution by using the CAFM in conjunction with the Agilent 4156C.

Keywords

MIS devices; atomic force microscopy; electric breakdown; semiconductor device reliability; statistical distributions; Agilent 4156C; bias-annealing effect; conductive atomic force microscopy; nanoscaled stress; post-breakdown current conduction; statistical distribution; thin gate oxide reliability; Area measurement; Atomic force microscopy; Atomic measurements; Breakdown voltage; Carbon capture and storage; Conductivity measurement; Electric breakdown; Electric variables measurement; Force measurement; Stress measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on

Conference_Location

Tainan

Print_ISBN

978-1-4244-0637-1

Electronic_ISBN

978-1-4244-0637-1

Type

conf

DOI

10.1109/EDSSC.2007.4450056

Filename

4450056