DocumentCode
2980001
Title
Fabrication of Silicon-on-Insulator Substrates Using Plasma Technologies
Author
Chu, Paul K.
Author_Institution
City Univ. of Hong Kong, Kowloon
fYear
2007
fDate
20-22 Dec. 2007
Firstpage
43
Lastpage
46
Abstract
This invited paper reviews the work done in our laboratory on the fabrication of silicon-on-insulator (SOI) materials using plasma hydrogenation and the synthesis of novel silicon-on-diamond and silicon-on-dual-insulator SOI structures with better thermal properties.
Keywords
insulators; silicon-on-insulator; SOI; plasma technologies; silicon-on-diamond synthesis; silicon-on-dual-insulator structures; silicon-on-insulator substrates fabrication; thermal properties; Fabrication; Hydrogen; Ion implantation; Plasma devices; Plasma immersion ion implantation; Plasma materials processing; Plasma properties; Plasma sources; Silicon on insulator technology; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
Conference_Location
Tainan
Print_ISBN
978-1-4244-0637-1
Electronic_ISBN
978-1-4244-0637-1
Type
conf
DOI
10.1109/EDSSC.2007.4450058
Filename
4450058
Link To Document