DocumentCode :
2980001
Title :
Fabrication of Silicon-on-Insulator Substrates Using Plasma Technologies
Author :
Chu, Paul K.
Author_Institution :
City Univ. of Hong Kong, Kowloon
fYear :
2007
fDate :
20-22 Dec. 2007
Firstpage :
43
Lastpage :
46
Abstract :
This invited paper reviews the work done in our laboratory on the fabrication of silicon-on-insulator (SOI) materials using plasma hydrogenation and the synthesis of novel silicon-on-diamond and silicon-on-dual-insulator SOI structures with better thermal properties.
Keywords :
insulators; silicon-on-insulator; SOI; plasma technologies; silicon-on-diamond synthesis; silicon-on-dual-insulator structures; silicon-on-insulator substrates fabrication; thermal properties; Fabrication; Hydrogen; Ion implantation; Plasma devices; Plasma immersion ion implantation; Plasma materials processing; Plasma properties; Plasma sources; Silicon on insulator technology; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
Conference_Location :
Tainan
Print_ISBN :
978-1-4244-0637-1
Electronic_ISBN :
978-1-4244-0637-1
Type :
conf
DOI :
10.1109/EDSSC.2007.4450058
Filename :
4450058
Link To Document :
بازگشت