Next generation lithography-implications

The semiconductor industry growth continues to be driven to a large extent by steady advancements in microlithography. The SIA Roadmap renewal is underway and “work-in-process” predicts accelerating requirements. The 130 nm generation is anticipated to be needed in the year 2003, with the 100 nm generation 3 years later...the path to get there is not obvious! With a potential end to traditional optical lithography, the choices among Extreme Ultraviolet (EUV or soft X-ray), ion beam, projection e-beam, proximity X-ray, or alternative reflective technology is not obvious or guaranteed for success in the time required. The goal is to make a data-driven decision by late 1997. As the concluding paper in this special section on Lithography, this work will look at the implications of entering into a new technology as the industry attempts to maintain the historic growth curve-also called staying on the roadmap. The purpose of this paper is look at the issues and raise the questions that need to be considered before moving to a new technology