Title :
HfO2 CMOS Device and Circuit Reliability
Author_Institution :
Univ. of Central Florida, Orlando
Abstract :
In this invited talk, HfO2 transistor channel hot electron and gate breakdown on device and circuit behaviors are presented.
Keywords :
CMOS integrated circuits; MOSFET; circuit reliability; electric breakdown; hafnium compounds; hot electron transistors; invertors; low noise amplifiers; oscillators; CMOS inverter; CMOS inverter pull-down delay; RF circuit performances; SPICE simulation; cascode low noise amplifier; channel hot electrons; circuit reliability; dielectrics; gate breakdown; hot electron effect; nMOSFET; noise figure; ring oscillator; transistor DC-AC parameters; Cutoff frequency; Degradation; Electrons; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; MOSFETs; Noise figure; Radio frequency; Stress;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
Conference_Location :
Tainan
Print_ISBN :
978-1-4244-0637-1
Electronic_ISBN :
978-1-4244-0637-1
DOI :
10.1109/EDSSC.2007.4450062
