Title :
Tbulk-BICS: A built-in current sensor robust to process and temperature variations for SET detection
Author :
Neto, Egas Henes ; Kastensmidt, Fernanda Lima ; Wirth, Gilson Inácio
Author_Institution :
Inst. de Inf., Univ. Fed. do Rio Grande do Sul, Rio Grande, Brazil
Abstract :
This paper presents a parameterized current sensor able to detect transient ionization in the silicon substrate. Each sensor is controlled by a set of trimming bits that can be used to attune the sensitivity of the sensor while compensate process and temperature variations. Electrical simulation results show that the use of this parameterized sensor can increase the number of transistors monitored by a single sensor and at the same time maintain the efficiency in SET detection.
Keywords :
CMOS integrated circuits; built-in self test; electric current measurement; electric sensing devices; silicon; transient analysis; BICS; CMOS technology; SET detection; Si; built-in current sensor; electrical simulation; silicon substrate; single event transient; transient ionization; trimming bits; CMOS technology; Combinational circuits; Electrical fault detection; Fault detection; Ionization; Robustness; Sequential circuits; Silicon; Substrates; Temperature sensors; current sensor; single event transient; soft error detection; variability;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 2007. RADECS 2007. 9th European Conference on
Conference_Location :
Deauville
Print_ISBN :
978-1-4244-1704-9
DOI :
10.1109/RADECS.2007.5205469
