Tbulk-BICS: A built-in current sensor robust to process and temperature variations for SET detection

Author

Neto, Egas Henes ; Kastensmidt, Fernanda Lima ; Wirth, Gilson Inácio

Author_Institution

Inst. de Inf., Univ. Fed. do Rio Grande do Sul, Rio Grande, Brazil

fYear

2007

fDate

10-14 Sept. 2007

Firstpage

1

Lastpage

8

Abstract

This paper presents a parameterized current sensor able to detect transient ionization in the silicon substrate. Each sensor is controlled by a set of trimming bits that can be used to attune the sensitivity of the sensor while compensate process and temperature variations. Electrical simulation results show that the use of this parameterized sensor can increase the number of transistors monitored by a single sensor and at the same time maintain the efficiency in SET detection.

Keywords

CMOS integrated circuits; built-in self test; electric current measurement; electric sensing devices; silicon; transient analysis; BICS; CMOS technology; SET detection; Si; built-in current sensor; electrical simulation; silicon substrate; single event transient; transient ionization; trimming bits; CMOS technology; Combinational circuits; Electrical fault detection; Fault detection; Ionization; Robustness; Sequential circuits; Silicon; Substrates; Temperature sensors; current sensor; single event transient; soft error detection; variability;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and Its Effects on Components and Systems, 2007. RADECS 2007. 9th European Conference on

Conference_Location

Deauville

ISSN

0379-6566

Print_ISBN

978-1-4244-1704-9

Type

conf

DOI

10.1109/RADECS.2007.5205469

Filename

5205469