• DocumentCode
    2980113
  • Title

    Total ionization dose effects and single-event effects studies of a 0.25 µm Silicon-On-Sapphire CMOS technology

  • Author

    Liu, Tiankuan ; Chen, Wickham ; Gui, Ping ; Yang, Cheng-An ; Zhang, Junheng ; Zhu, Peiqing ; Xiang, Annie C. ; Ye, Jingbo ; Stroynowski, Ryszard

  • Author_Institution
    Dept. of Phys., Southern Methodist Univ., Dallas, TX, USA
  • fYear
    2007
  • fDate
    10-14 Sept. 2007
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    The total ionization dose effects and the single event effects in a 0.25 mum Silicon-On-Sapphire CMOS process are studied with a total dose of 100 krad(Si) and a fluence of 1.8times1012 proton/cm2. The results indicate that this process is radiation tolerant.
  • Keywords
    CMOS integrated circuits; radiation tolerant; silicon-on-sapphire CMOS technology; single-event effects studies; size 0.25 mum; total ionization dose effects; CMOS process; CMOS technology; Insulation; Ionization; Ionizing radiation; Physics; Protons; Silicon on insulator technology; Space technology; Testing; CMOSFETs; radiation effects; silicon-on-sapphire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation and Its Effects on Components and Systems, 2007. RADECS 2007. 9th European Conference on
  • Conference_Location
    Deauville
  • ISSN
    0379-6566
  • Print_ISBN
    978-1-4244-1704-9
  • Type

    conf

  • DOI
    10.1109/RADECS.2007.5205470
  • Filename
    5205470
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2980113