Title :
Total ionization dose effects and single-event effects studies of a 0.25 µm Silicon-On-Sapphire CMOS technology
Author :
Liu, Tiankuan ; Chen, Wickham ; Gui, Ping ; Yang, Cheng-An ; Zhang, Junheng ; Zhu, Peiqing ; Xiang, Annie C. ; Ye, Jingbo ; Stroynowski, Ryszard
Author_Institution :
Dept. of Phys., Southern Methodist Univ., Dallas, TX, USA
Abstract :
The total ionization dose effects and the single event effects in a 0.25 mum Silicon-On-Sapphire CMOS process are studied with a total dose of 100 krad(Si) and a fluence of 1.8times1012 proton/cm2. The results indicate that this process is radiation tolerant.
Keywords :
CMOS integrated circuits; radiation tolerant; silicon-on-sapphire CMOS technology; single-event effects studies; size 0.25 mum; total ionization dose effects; CMOS process; CMOS technology; Insulation; Ionization; Ionizing radiation; Physics; Protons; Silicon on insulator technology; Space technology; Testing; CMOSFETs; radiation effects; silicon-on-sapphire;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 2007. RADECS 2007. 9th European Conference on
Conference_Location :
Deauville
Print_ISBN :
978-1-4244-1704-9
DOI :
10.1109/RADECS.2007.5205470
