A Simple Method to Extract Source/Drain Series Resistance for Advanced MOSFETs

Author

Chang, Y.H. ; Wu, Y.F. ; Ho, C.S.

Author_Institution

Nat. Yunlin Univ. of Sci. & Technol., Touliu

fYear

2007

fDate

20-22 Dec. 2007

Firstpage

87

Lastpage

90

Abstract

In this work, we developed a simple method for determining gate-bias dependent source and drain series resistances for advanced MOSFETs. Devices with gate lengths from 0.185 mum to 0.23 mum were measured and used to verify our theoretical derivation. Our result shows that the source/drain series resistance increases slightly then decreases moderately with gate bias. Simulation shows excellent agreement with the measurement. The improved method provides better efficiency and accuracy for modeling current-voltage characteristics of MOSFETs with LDD and pocket implants.

Keywords

MOSFET; electric resistance; electric resistance measurement; advanced MOSFET; current-voltage characteristics modeling; drain series resistance extraction; gate bias dependent source; metal-oxide-semiconductor field effect transistor; size 0.185 mum to 0.232 mum; source resistance extraction; Circuit synthesis; Current-voltage characteristics; Electrical resistance measurement; Electron mobility; Implants; Length measurement; Linear approximation; MOSFETs; Monitoring; Surface resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on

Conference_Location

Tainan

Print_ISBN

978-1-4244-0637-1

Electronic_ISBN

978-1-4244-0637-1

Type

conf

DOI

10.1109/EDSSC.2007.4450068

Filename

4450068