Title :
Evaluation of 35nm MOSFET capacitance components in PSP compact model
Author :
Dideban, Daryoosh ; Cheng, Binjie ; Moezi, Negin ; Wang, Xingsheng ; Asenov, Asen
Author_Institution :
Device Modelling Group, Univ. of Glasgow, Glasgow, UK
Abstract :
In this paper the capacitance components of the PSP compact model which is selected as successor of BSIM4 by the Compact Modelling Council (CMC) are investigated and simulated in HSPICE for the state of the art 35nm MOSFET device. The simulations are compared with TCAD results in both transcapacitance components between the device terminals and time domain to show the impact of accuracy of compact model on real circuit simulations.
Keywords :
Capacitance; Circuit simulation; Computational modeling; Data mining; Geometry; MOSFET circuits; Parameter extraction; Physics; Surface fitting; Threshold voltage; Compact Modelling; PSP; TCAD; Transcapacitance; nanoCMOS;
Conference_Titel :
Electrical Engineering (ICEE), 2010 18th Iranian Conference on
Conference_Location :
Isfahan, Iran
Print_ISBN :
978-1-4244-6760-0
DOI :
10.1109/IRANIANCEE.2010.5507045
