Title :
A New Two-dimensional Model for Asymmetrical Dual Gate Material Double-Gate (ADMDG) MOSFET´s
Author :
Chiang, T.K. ; Chiang, T.H.
Author_Institution :
Southern Taiwan Univ., Tainan
Abstract :
Based on the exact resultant solution of two dimensional Poisson´s equation, a novel two-dimensional model including surface channel potential, subthreshold swing, and threshold voltage for asymmetrical dual gate material double-gate (ADMDG) MOSFET´s have been developed. The model is verified by the simulation results that agree well with those of the two-dimensional numerical simulator. Besides offering the physical insight into device physics, the model provides the basic designing guidance of ADMDG MOSFET´s.
Keywords :
MOSFET; Poisson equation; integrated circuit design; 2D Poisson equation; asymmetrical dual gate material double-gate MOSFET; designing guidance; device physics; subthreshold swing; surface channel potential; threshold voltage; Boundary conditions; Doping; Laplace equations; MOSFET circuits; Numerical simulation; Physics; Poisson equations; Semiconductor process modeling; Threshold voltage; Tunneling;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
Conference_Location :
Tainan
Print_ISBN :
978-1-4244-0637-1
Electronic_ISBN :
978-1-4244-0637-1
DOI :
10.1109/EDSSC.2007.4450070
