A New Two-dimensional Model for Asymmetrical Dual Gate Material Double-Gate (ADMDG) MOSFET´s

Author

Chiang, T.K. ; Chiang, T.H.

Author_Institution

Southern Taiwan Univ., Tainan

fYear

2007

fDate

20-22 Dec. 2007

Firstpage

95

Lastpage

98

Abstract

Based on the exact resultant solution of two dimensional Poisson´s equation, a novel two-dimensional model including surface channel potential, subthreshold swing, and threshold voltage for asymmetrical dual gate material double-gate (ADMDG) MOSFET´s have been developed. The model is verified by the simulation results that agree well with those of the two-dimensional numerical simulator. Besides offering the physical insight into device physics, the model provides the basic designing guidance of ADMDG MOSFET´s.

Keywords

MOSFET; Poisson equation; integrated circuit design; 2D Poisson equation; asymmetrical dual gate material double-gate MOSFET; designing guidance; device physics; subthreshold swing; surface channel potential; threshold voltage; Boundary conditions; Doping; Laplace equations; MOSFET circuits; Numerical simulation; Physics; Poisson equations; Semiconductor process modeling; Threshold voltage; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on

Conference_Location

Tainan

Print_ISBN

978-1-4244-0637-1

Electronic_ISBN

978-1-4244-0637-1

Type

conf

DOI

10.1109/EDSSC.2007.4450070

Filename

4450070