Title :
Influence of STI-Induced Mechnical Stress In Kink Effect of 65nm PD SOI CMOS Devices
Author :
Lin, I. ; Su, V. ; kuo, jay ; Lee, R. ; Lin, G. ; Chen, D. ; Yeh, C. ; Tsai, C. ; Ma, M.
Author_Institution :
Nat. Taiwan Univ., Taipei
Abstract :
The mechanical stress induced by shallow trench isolation (STI) may affect the performance of CMOS devices. Mechanical stress may change workfunction, effective mass, carrrier mobility, and junction leakage. This paper reports the influence of STI-induced mechanical stress in the kink effect of a 65 nm PD SOI NMOS device.
Keywords :
CMOS integrated circuits; carrier mobility; leakage currents; silicon-on-insulator; PD SOI CMOS devices; PD SOI NMOS device; STI-induced mechanical stress; carrrier mobility; effective mass; junction leakage; kink effect; shallow trench isolation; size 65 nm; Effective mass; Length measurement; MOS devices; Medical simulation; Medical tests; Occupational stress; Photonic band gap; Textile industry; Thin film devices; Transistors;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
Conference_Location :
Tainan
Print_ISBN :
978-1-4244-0637-1
Electronic_ISBN :
978-1-4244-0637-1
DOI :
10.1109/EDSSC.2007.4450073
