Title :
Monte Carlo particle modeling of electron velocity overshoot effect in MSM photodiodes
Author :
Ryzhii, M. ; Willander, M. ; Khmyrova, I. ; Ryzhii, V.
Author_Institution :
Chalmers Univ. of Technol., Goteborg, Sweden
Abstract :
We present a numerical study of metal-semiconductor-metal (MSM) photodiodes based on a planar structure composed of interdigitated Schottky contacts on top of a thin GaAs absorbing layer with lateral light input. A self-consistent ensemble Monte Carlo (MC) particle method with the Fourier transform of the calculated transient photocurrent is used to obtain the frequency dependent responsivity. It is shown that the MSM photodiodes can exhibit marked responsivity in terahertz range of signal frequencies even for contact spacing about few tenth of micrometer. The results of the MC simulation are discussed invoking proposed analytical model
Keywords :
Monte Carlo methods; metal-semiconductor-metal structures; photodiodes; semiconductor device models; Fourier transform; GaAs; MSM photodiode; Monte Carlo particle model; electron velocity overshoot; interdigitated Schottky contact; numerical simulation; planar structure; terahertz frequency responsivity; transient photocurrent; Bandwidth; Electrons; Fingers; Frequency; Gallium arsenide; Monte Carlo methods; Photoconductivity; Photodetectors; Photodiodes; Schottky barriers;
Conference_Titel :
Physics and Modeling of Devices Based on Low-Dimensional Structures, 1998. Proceedings., Second International Workshop on
Conference_Location :
Aizu-Wakamatsu
Print_ISBN :
0-8186-8682-0
DOI :
10.1109/LDS.1998.714533
