Title :
Impacts of NH3 Plasma Treatment on Double-Gated Poly-Si Nanowire Thin-Film Transistors
Author :
Lee, K.H. ; Lin, H.C. ; Hsu, H.H. ; Huang, T.Y.
Author_Institution :
Nat. Chiao Tung Univ., Hsinchu
Abstract :
NH3 plasma treatment has been employed to improve the performance of a novel double-gated poly-Si nanowire thin-film transistor in terms of increased on-state current, reduced off-state current, and steeper sub-threshold slope. An interesting finding is that the radiation damage, accompanying by a negative shift in threshold voltage, appears to occur in the early stage of plasma treatment for devices with top poly-gate. Such effect disappears when an Al top-gate is used instead.
Keywords :
nanowires; plasma; silicon; thin film transistors; off-state current; on-state current; plasma treatment; polysilicon nanowire thin-film transistors; radiation damage; Annealing; Crystallization; Fabrication; Plasma applications; Plasma devices; Plasma immersion ion implantation; Plasma properties; Plasma sources; Substrates; Thin film transistors;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
Conference_Location :
Tainan
Print_ISBN :
978-1-4244-0637-1
Electronic_ISBN :
978-1-4244-0637-1
DOI :
10.1109/EDSSC.2007.4450078
