• DocumentCode
    2980406
  • Title

    Impacts of NH3 Plasma Treatment on Double-Gated Poly-Si Nanowire Thin-Film Transistors

  • Author

    Lee, K.H. ; Lin, H.C. ; Hsu, H.H. ; Huang, T.Y.

  • Author_Institution
    Nat. Chiao Tung Univ., Hsinchu
  • fYear
    2007
  • fDate
    20-22 Dec. 2007
  • Firstpage
    125
  • Lastpage
    128
  • Abstract
    NH3 plasma treatment has been employed to improve the performance of a novel double-gated poly-Si nanowire thin-film transistor in terms of increased on-state current, reduced off-state current, and steeper sub-threshold slope. An interesting finding is that the radiation damage, accompanying by a negative shift in threshold voltage, appears to occur in the early stage of plasma treatment for devices with top poly-gate. Such effect disappears when an Al top-gate is used instead.
  • Keywords
    nanowires; plasma; silicon; thin film transistors; off-state current; on-state current; plasma treatment; polysilicon nanowire thin-film transistors; radiation damage; Annealing; Crystallization; Fabrication; Plasma applications; Plasma devices; Plasma immersion ion implantation; Plasma properties; Plasma sources; Substrates; Thin film transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
  • Conference_Location
    Tainan
  • Print_ISBN
    978-1-4244-0637-1
  • Electronic_ISBN
    978-1-4244-0637-1
  • Type

    conf

  • DOI
    10.1109/EDSSC.2007.4450078
  • Filename
    4450078
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2980406