Title :
Analysis of Charge Retention Characteristics for Metal and Semiconductor Nanocrystal Non-volatile Memories
Author :
Guan, Weihua ; Long, Shibing ; Jia, Rui ; Liu, Qi ; Hu, Yuan ; Wang, Qin ; Liu, Ming
Author_Institution :
Chinese Acad. of Sci., Beijing
Abstract :
A charge retention model for nanocrystal MOSFET memory structure is proposed, taken into account the quantum confinement effect, to account for the better retention characteristics of metal nanocrystal memories over their semiconductor counterparts observed in the experiment. Simulation results are in consistent with experimental data, which confirms the validity of this model. The impact of nanocrystal size, tunneling dielectric material (especially high-k dielectrics) and thickness on the retention characteristics are investigated for both of the metal nanocrystal and semiconductor nanocrystal memories.
Keywords :
MOSFET; high-k dielectric thin films; memory architecture; nanostructured materials; semiconductor storage; charge retention characteristics; high-k dielectrics; metal nanocrystal memories; metal nanocrystal nonvolatile memories; nanocrystal MOSFET memory structure; nanocrystal size; quantum confinement effect; semiconductor counterparts; semiconductor nanocrystal memories; semiconductor nanocrystal nonvolatile memories; tunneling dielectric material; Dielectric materials; Energy states; High-K gate dielectrics; MOSFET circuits; Nanocrystals; Nonvolatile memory; Permittivity; Potential well; Silicon; Tunneling;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
Conference_Location :
Tainan
Print_ISBN :
978-1-4244-0637-1
Electronic_ISBN :
978-1-4244-0637-1
DOI :
10.1109/EDSSC.2007.4450082
