DocumentCode
2980485
Title
Interface trap model for the low-dose-rate effect in bipolar devices
Author
Pershenkov, V.S. ; Chumakov, K.A. ; Nikiforov, A.Y. ; Chumakov, A.I. ; Ulimov, V.N. ; Romanenko, A.A.
Author_Institution
Dept. of Microelectron. of Moscow, Eng. Phys. Inst., Moscow, Russia
fYear
2007
fDate
10-14 Sept. 2007
Firstpage
1
Lastpage
6
Abstract
It is shown that the gain degradation of NPN and PNP bipolar transistors at low-dose-rate irradiation basically connects with radiation-induced interface traps build-up. The test for simulating low-dose-rate effect is presented.
Keywords
bipolar transistors; NPN bipolar transistors; PNP bipolar transistors; bipolar devices; gain degradation; interface trap model; low-dose-rate effect; low-dose-rate irradiation; radiation-induced interface; Bipolar transistors; Degradation; Electron traps; Instruments; Lead compounds; MOSFETs; Physics; Spontaneous emission; Temperature measurement; Testing; Interface Trap; Low-Dose-Rate Effect; Simulating test; bipolar transistor;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems, 2007. RADECS 2007. 9th European Conference on
Conference_Location
Deauville
ISSN
0379-6566
Print_ISBN
978-1-4244-1704-9
Type
conf
DOI
10.1109/RADECS.2007.5205487
Filename
5205487
Link To Document