Title :
Interface trap model for the low-dose-rate effect in bipolar devices
Author :
Pershenkov, V.S. ; Chumakov, K.A. ; Nikiforov, A.Y. ; Chumakov, A.I. ; Ulimov, V.N. ; Romanenko, A.A.
Author_Institution :
Dept. of Microelectron. of Moscow, Eng. Phys. Inst., Moscow, Russia
Abstract :
It is shown that the gain degradation of NPN and PNP bipolar transistors at low-dose-rate irradiation basically connects with radiation-induced interface traps build-up. The test for simulating low-dose-rate effect is presented.
Keywords :
bipolar transistors; NPN bipolar transistors; PNP bipolar transistors; bipolar devices; gain degradation; interface trap model; low-dose-rate effect; low-dose-rate irradiation; radiation-induced interface; Bipolar transistors; Degradation; Electron traps; Instruments; Lead compounds; MOSFETs; Physics; Spontaneous emission; Temperature measurement; Testing; Interface Trap; Low-Dose-Rate Effect; Simulating test; bipolar transistor;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 2007. RADECS 2007. 9th European Conference on
Conference_Location :
Deauville
Print_ISBN :
978-1-4244-1704-9
DOI :
10.1109/RADECS.2007.5205487
