Impact of hydrogen contamination on the total dose response of linear bipolar microcircuits

Author

Adell, P.C. ; McClure, S. ; Pease, R.L. ; Rax, B.G. ; Dunham, G.W. ; Barnaby, H.J. ; Chen, X.J.

Author_Institution

Jet Propulsion Lab., Pasadena, CA, USA

fYear

2007

fDate

10-14 Sept. 2007

Firstpage

1

Lastpage

8

Abstract

Several linear bipolar microcircuits commonly used in space have been selected to investigate whether hydrogen contamination has an impact on their total dose response. Results obtained from irradiations performed on the HSYE117 linear voltage regulator from Intersil and the AD590 temperature transducer from Analog Devices show a causal relationship between in-package hydrogen content and total dose response. Silicon nitride passivation has been found to play a key role in this study. A recommended approach to hardening bipolar linear circuits with poor total dose response is to characterize them as processed through metallization.

Keywords

bipolar analogue integrated circuits; metallisation; passivation; voltage control; hydrogen contamination; hydrogen content; linear bipolar microcircuits; linear voltage regulator; metallization; silicon nitride passivation; total dose response; Contamination; Hydrogen; Linear circuits; Metallization; Passivation; Regulators; Silicon; Temperature; Transducers; Voltage; Enhanced low-dose rate sensitivity; hydrogen; linear regulator; passivation; radiation effects; temperature transducer; total ionizing dose;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and Its Effects on Components and Systems, 2007. RADECS 2007. 9th European Conference on

Conference_Location

Deauville

ISSN

0379-6566

Print_ISBN

978-1-4244-1704-9

Type

conf

DOI

10.1109/RADECS.2007.5205490

Filename

5205490