Electrical Properties of Bilayer SrBi2Ta2O9/Ba(Zr0.1 Ti0.9)O3 Thin Films for Ferroelectric Random Access Memory Applications

Author

Tzou, W.C. ; Chen, K.H. ; Yang, C.F. ; Li, C.C.

Author_Institution

Southern Taiwan Univ., Taipei

fYear

2007

fDate

20-22 Dec. 2007

Firstpage

169

Lastpage

172

Abstract

Ferroelectric thin films of SrBi₂Ta₂O₉ (SBT) or bilayered SrBi₂Ta₂O₉/Ba(Zr_0.1Ti_0.9)O₃ (SBT/BZT) are successfully deposited on Si substrate under the optimal RF magnetron sputtering conditions, and their electrical and ferroelectric characteristics are discussed. The memory window, capacitance and leakage current density of MFS structures under different oxygen concentrations are also reported. The memory window of bilayered SBT/BZT structure shows larger than one of single layer SBT structure. Besides, the bilayered SBT/BZT structure exhibits a ferroelectric behavior with a remanent polarization of 8 muC/cm² and a coercive field of and 130 kV/cm.

Keywords

barium compounds; bismuth compounds; ferroelectric storage; ferroelectric thin films; oxygen compounds; random-access storage; sputtering; strontium compounds; tantalum compounds; titanium compounds; zirconium compounds; SrBi₂Ta₂O₉-Ba(Zr_0.1Ti_0.9)O₃; capacitance; electrical properties; ferroelectric random access memory; ferroelectric thin films; leakage current density; memory window; optimal RF magnetron sputtering conditions; oxygen concentrations; remanent polarization; Dielectric substrates; Dielectric thin films; Ferroelectric materials; Leakage current; Nonvolatile memory; Polarization; Radio frequency; Random access memory; Semiconductor thin films; Sputtering;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on

Conference_Location

Tainan

Print_ISBN

978-1-4244-0637-1

Electronic_ISBN

978-1-4244-0637-1

Type

conf

DOI

10.1109/EDSSC.2007.4450089

Filename

4450089