Aluminium Incorporation in Lanthanum Oxide Films by using Plasma Immersion Ion Implantation

Author

Sen, Banani ; Yang, B.L. ; Wong, Hei ; Chu, P.K. ; Huang, A. ; Kakushima, K. ; Iwai, H.

Author_Institution

City Univ. of Hong Kong, Kowloon

fYear

2007

fDate

20-22 Dec. 2007

Firstpage

173

Lastpage

176

Abstract

The physics and the effects of aluminium incorporation into lanthanum oxide (La₂O₃) films were studied by using x-ray photoelectron spectroscopy and electrical measurements. We found that trace amount (5% ) of aluminium incorporation in lanthanum oxide film can suppress the leakage current effectively. The bulk oxide traps and interface traps can also reduced. The percentage of aluminium incorporation into the La₂O₃ films by plasma immersion ion-implantation needs to be optimized to have the maximum reduction of oxide traps and to maintain the lowest leakage current.

Keywords

X-ray spectroscopy; aluminium; lanthanum compounds; plasma immersion ion implantation; aluminium incorporation; electrical measurement; interface trap; lanthanum oxide film; leakage current suppression; oxide trap; plasma immersion ion implantation; x-ray photoelectron spectroscopy; Aluminum; Dielectric films; Dielectric materials; Dielectrics and electrical insulation; Electric variables measurement; Lanthanum; Leakage current; Plasma immersion ion implantation; Plasma temperature; Silicon; aluminium; lanthanum oxide; plasma immersion ion implantation; x-ray photoelectron spectroscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on

Conference_Location

Tainan

Print_ISBN

978-1-4244-0637-1

Electronic_ISBN

978-1-4244-0637-1

Type

conf

DOI

10.1109/EDSSC.2007.4450090

Filename

4450090