Effects of annealing gas on electrical properties and reliability of Ge MOS capacitors with HfTiON as gate dielectric

In this work, Ge MOS capacitors with HfTiON as high-k gate dielectric are fabricated. The impacts of different annealings in wet N₂, wet NH₃, wet N₂O and wet NO on the electrical and reliability properties of Ge MOS capacitors are investigated. Experimental results show that the wet NO annealing produces the best electrical properties and reliability for the Ge MOS devices.