Improved Performance for OTFT with HfTiO2 as gate dielectric by N2O annealing

Author

Tang, W.M. ; Cheng, K.H. ; Leung, C.H. ; Lai, P.T. ; Xu, J.P. ; Che, C.M.

Author_Institution

Univ. of Hong Kong, Hong Kong

fYear

2007

fDate

20-22 Dec. 2007

Firstpage

189

Lastpage

192

Abstract

OTFTs with HfTiO₂ as gate dielectric have been successfully fabricated. The devices show small threshold voltage and subthreshold slope, and thus are suitable for low-voltage and low-power applications. This work also finds that OTFT with gate dielectric annealed in N₂O has larger dielectric constant, smaller threshold voltage, smaller subthreshold slope and larger on/off ratio than the N₂-annealed sample. This demonstrates that the N₂O annealing is an important surface treatment for preparing a high-quality insulator/organic interface.

Keywords

annealing; dielectric devices; hafnium compounds; low-power electronics; organic semiconductors; thin film transistors; HfTiO₂; OTFT; annealing; dielectric constant; dielectric gate; high-quality insulator-organic interface; low-power applications; organic thin-film transistor; surface treatment; Annealing; Dielectric constant; Dielectrics and electrical insulation; Hafnium; High K dielectric materials; High-K gate dielectrics; Organic thin film transistors; Pentacene; Thin film transistors; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on

Conference_Location

Tainan

Print_ISBN

978-1-4244-0637-1

Electronic_ISBN

978-1-4244-0637-1

Type

conf

DOI

10.1109/EDSSC.2007.4450094

Filename

4450094