Title :
Effects of TID on transistor parameters of dc-dc converters
Author :
Attia, John O. ; Zhang, Dexin ; Issa, Elie ; David Kankam, M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Prairie View A&M Univ., Prairie View, TX, USA
Abstract :
The output voltages of Buck and Buck-Boost converters, built using IRF250 power MOSFETs, increased with total dose up to 20 Krads(Si). The MOSFET turn-on time was found to increase with total dose. The increased turn-on time of the power MOSFET was found to cause the output voltage of the converters to increase.
Keywords :
DC-DC power convertors; power MOSFET; radiation effects; buck-boost converters; dc-dc converters; power MOSFET; total ionizing dose; transistor parameters; Automation; BiCMOS integrated circuits; Bipolar transistors; DC-DC power converters; Ionizing radiation; MOSFETs; NASA; Radiation hardening; Switching converters; Voltage; Buck converter; Buck-Boost converter; total ionizing dose; turn-on time;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 2007. RADECS 2007. 9th European Conference on
Conference_Location :
Deauville
Print_ISBN :
978-1-4244-1704-9
DOI :
10.1109/RADECS.2007.5205497
