DocumentCode :
2980696
Title :
The potential of electron-nuclear spin interactions for use in quantum information processing
Author :
Hitt, G.W. ; Isakovic, A.F.
Author_Institution :
Khalifa Univ. of Sci., Technol. & Res., Abu Dhabi, United Arab Emirates
fYear :
2011
fDate :
19-22 Feb. 2011
Firstpage :
154
Lastpage :
157
Abstract :
Recent experiments have demonstrated that an ensemble of spin polarized electrons can transfer its spin polarization to the spin of the host atomic nuclei in a “spin-friendly” semiconductor like gallium arsenide (GaAs). In this paper, we analyze this process in terms of its efficiency for using natural nuclear spin in a solid state quantum computer. Among the appealing features of the proposed design is the potential to mate it to existing memory technology. We propose a realizable and scalable model of such a device based on growth-implanted quantum dots in a III-V semiconductor matrix and analyze the feasibility of transferring spin polarized information to such a system, keeping it stored in the system and processing it.
Keywords :
III-V semiconductors; gallium compounds; nuclear spin; quantum computing; III-V semiconductor matrix; electron-nuclear spin interactions; gallium arsenide; host atomic nuclei; natural nuclear spin; quantum dots; quantum information processing; solid state quantum computer; spin polarized electrons; Films; Iron; Magnetic field measurement; Magnetic fields; Magnetization; Polarization; Temperature dependence; Schottky diodes; electroluminescence; magnetic anisotropy; polarization; quantum effect semiconductor devices;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
GCC Conference and Exhibition (GCC), 2011 IEEE
Conference_Location :
Dubai
Print_ISBN :
978-1-61284-118-2
Type :
conf
DOI :
10.1109/IEEEGCC.2011.5752488
Filename :
5752488
Link To Document :
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