A Novel Structure of a-Si:H Based Photoconductor Stacked on APS Technology

Author

Wang, Hsin-Heng ; Miida, Takashi ; Wang, Chia-Chiang ; Kawajiri, Kazuhiro ; Huang, Chiu-Tsung ; Lin, Shin-Siang

Author_Institution

Powerchip Semicond. Corp., Chinchu

fYear

2007

fDate

20-22 Dec. 2007

Firstpage

201

Lastpage

204

Abstract

In this paper, we present the characterization of a-Si:H based Photoconductor stacked on Active Pixel with Shield Gate (SG) technology to avoid electrical cross-talk current across pixels. The pixel area consists of a p-i-n layer as photo detector, and a newly proposed SG electrode thereby providing a high potential barrier between two pixels. The simulation and measurement results demonstrate that cross-talk can be suppressed by the barrier for electrons for this proposed pixel. Moreover, in order to realize the influence of pixel´s geography, different i-layer thickness was studied in this work. By simulation result, thicker i-layer would be larger absorption that will bring the high sensitivity of pixel, though it is trading off with cross-talk.

Keywords

CMOS image sensors; crosstalk; photoconducting materials; active pixel sensors; electrical cross-talk current; p-i-n layer; photoconductors; shield gate technology; CMOS image sensors; Computational Intelligence Society; Electrostatic analysis; Energy consumption; Image sensors; Performance analysis; Photoconductivity; Sensor phenomena and characterization; Signal to noise ratio; Thermal sensors; APS; CMOS image sensor; a-Si:H; cross-talk; simulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on

Conference_Location

Tainan

Print_ISBN

978-1-4244-0637-1

Electronic_ISBN

978-1-4244-0637-1

Type

conf

DOI

10.1109/EDSSC.2007.4450097

Filename

4450097