DocumentCode
2980791
Title
Analytical analysis of the MCUs sensitiveness of TMR architectures in SRAM-based FPGAs
Author
Sterpone, L. ; Violante, M.
Author_Institution
Politec. di Torino, Torino, Italy
fYear
2007
fDate
10-14 Sept. 2007
Firstpage
1
Lastpage
6
Abstract
In this paper we present an analytical analysis of the fault masking capabilities of triple modular redundancy (TMR) hardening technique in the presence of multiple cell upsets (MCUs) in the configuration memory of SRAM-based FPGAs. The analytical method we developed allow an accurate study of the MCUs sensitiveness characterizing the orientation and the effects provoking multiple domain crossing errors that defeats the TMR fault tolerance capability. From our analysis we have found that most of the failure affects configurable logic block´s routing resources. The experimental analysis have been performed on two realistic case study circuits. Experimental results are presented and discussed in terms of faults effects showing in particular that 2-bits MCUs may corrupt TMR 2.6 order of magnitude more than single cell upsets (SCUs).
Keywords
SRAM chips; fault tolerant computing; field programmable gate arrays; MCU; SRAM-based FPGA; TMR architecture; configuration memory; fault masking capability; fault tolerance capability; multiple cell upset; triple modular redundancy hardening technique; Circuit faults; Costs; Field programmable gate arrays; Integrated circuit technology; Ionizing radiation; Logic; Radiation hardening; Random access memory; Redundancy; Routing; Field Programmable Gate Array (FPGA); TMR; analytical analysis; multiple bit upset;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems, 2007. RADECS 2007. 9th European Conference on
Conference_Location
Deauville
ISSN
0379-6566
Print_ISBN
978-1-4244-1704-9
Type
conf
DOI
10.1109/RADECS.2007.5205501
Filename
5205501
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