Title :
Simulation tool for the prediction of heavy ion cross section of innovative 130 nm SRAMs
Author :
Correas, V. ; Saigné, F. ; Sagnes, B. ; Boch, J. ; Gasiot, G. ; Giot, D. ; Roche, Ph.
Author_Institution :
Front-End Technol. & Manuf., STMicroelectronics, Crolles, France
Abstract :
A simulation tool to predict heavy ions cross-sections of standard SRAMs is applied to innovative SRAMs. From the standard to the innovative structure, input parameters are simply evaluated using Spice simulations. Experimental and simulated cross-sections are then shown to be in good agreement.
Keywords :
SRAM chips; electronic engineering computing; Spice simulations; heavy ion cross section; innovative SRAM; size 130 nm; Predictive models; Cross section; Heavy ion; Innovative SRAM; PHISco; SEU;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 2007. RADECS 2007. 9th European Conference on
Conference_Location :
Deauville
Print_ISBN :
978-1-4244-1704-9
DOI :
10.1109/RADECS.2007.5205503
