Extremely low-threshold continue-wave operation of InGaAs quantum-well lasers with an AlAs native-oxide layer grown by MOCVD

Threshold current as low as 12.8 mA for InGaAs quantum-well lasers grown by MOCVD have been demonstrated by a laterally oxidized technique. This value is relatively low for a wider active region (cavity length is 50 mum, stripe width is 14 mum) compare to other paper, thus indicates a lower threshold current density of 130 A/cm². With an thin AlAs confinement layer above the active region, improvement of CW operation and no obvious degradation of lasing performance for oxide-confined laser have been observed in this work.