DocumentCode :
2980868
Title :
Design, integration and characterization of PZT tunable FBAR
Author :
Zinck, Christophe ; Defay, Emmanuel ; Volatier, Alexandre ; Caruyer, Gregory ; Tanor, D.P. ; Figuiere, Laurent
Author_Institution :
RF Components Lab., CEA-DRT, Grenoble, France
fYear :
2004
fDate :
23-27 Aug. 2004
Firstpage :
29
Lastpage :
32
Abstract :
This work presents the elaboration and the characterization of PZT film bulk acoustic resonators. Resonators are elaborated by deep reactive ion etching of silicon. Resonators present quite small electromechanical characteristics (k332 and Q). Ferroelectric properties of the PZT thin film make possible the tuning of the frequency resonance. Butterfly dependencies were both observed for series and parallel resonances.
Keywords :
Q-factor; acoustic resonators; bulk acoustic wave devices; ferroelectric materials; ferroelectric thin films; lead compounds; sputter etching; zirconium compounds; PZT; PZT thin film; PZT tunable FBAR; PZT tunable film bulk acoustic resonators; PbZrO3TiO3; butterfly dependence; deep reactive ion etching; electromechanical characteristics; ferroelectric properties; frequency resonance tuning; parallel resonance; series resonance; Annealing; Crystallization; Ferroelectric films; Ferroelectric materials; Film bulk acoustic resonators; Piezoelectric films; Polarization; Radio frequency; Sputtering; Zirconium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applications of Ferroelectrics, 2004. ISAF-04. 2004 14th IEEE International Symposium on
ISSN :
1099-4734
Print_ISBN :
0-7803-8410-5
Type :
conf
DOI :
10.1109/ISAF.2004.1418330
Filename :
1418330
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2980868
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