• DocumentCode
    2980880
  • Title

    Annealing of Static data Errors in NAND-Flash memories

  • Author

    Schmidt, H. ; Walter, D. ; Bruggemann, M. ; Gliem, F. ; Harboe-Sorensen, R. ; Roos, P.

  • Author_Institution
    IDA, Inst. fur Datentechnik und Kommunikationsnetze, Tech. Univ. Braunschweig, Braunschweig, Germany
  • fYear
    2007
  • fDate
    10-14 Sept. 2007
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    We tested the Static Errors response of NAND-Flash memories to heavy ions, and we observed error annealing during and after exposure. The amount of the annealing depends on the LET of the used ions.
  • Keywords
    NAND circuits; annealing; flash memories; NAND; annealing; flash memories; static data errors; Annealing; Electrons; Ion accelerators; MOSFETs; Nonvolatile memory; Radiation effects; Satellites; Testing; Tunneling; Voltage; Floating Gate memories; Heavy-Ion; Radiation effects;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation and Its Effects on Components and Systems, 2007. RADECS 2007. 9th European Conference on
  • Conference_Location
    Deauville
  • ISSN
    0379-6566
  • Print_ISBN
    978-1-4244-1704-9
  • Type

    conf

  • DOI
    10.1109/RADECS.2007.5205505
  • Filename
    5205505
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2980880