DocumentCode
2980926
Title
Artificial ferroelectricity in paraelectric superlattices
Author
Tsurumi, Takaaki ; Harigai, Takakiyo ; Tanakem, Daisuke ; Kakemoto, Hirofumi ; Wada, Satoshi
Author_Institution
Graduate Sch. of Sci. & Eng., Tokyo Inst. of Technol., Japan
fYear
2004
fDate
23-27 Aug. 2004
Firstpage
39
Lastpage
42
Abstract
SrZrO3/SrTiO3 (SZO/STO) artificial superlattices were fabricated on STO substrates by the molecular beam epitaxy. The lattice distortion in the superlattices is dependent on stacking periodicity and is maximum in the [(SZO)10/(STO)10]4 superlattice. The dielectric properties were measured using interdigital electrodes at frequencies up to 110 MHz, and dielectric relaxation was observed in the [(SZO)1/(STO)1]40 and [(SZO)10/(STO)10]4 superlattices in the low-frequency domain. The dielectric permittivities of all superlattices were more than 10,000 at 110 MHz. The charge vs voltage (Q-V) measurement revealed that the SZO/STO superlattices show distinct hysteresis curves, which indicated that ferroelectricity is induced by the superlattices. The origin of the ferroelectricity seems to be related to the anisotropic lattice distortion incorporated into the superlattice structure.
Keywords
dielectric hysteresis; dielectric relaxation; epitaxial layers; ferroelectric materials; ferroelectric thin films; molecular beam epitaxial growth; permittivity; strontium compounds; superlattices; 110 MHz; SrZrO3-SrTiO3; anisotropic lattice distortion; artificial ferroelectricity; artificial superlattice; dielectric permittivities; dielectric properties; dielectric relaxation; hysteresis curves; interdigital electrodes; low-frequency domain; molecular beam epitaxy; paraelectric superlattice; stacking periodicity; Dielectric measurements; Dielectric substrates; Distortion measurement; Electrodes; Frequency measurement; Lattices; Molecular beam epitaxial growth; Permittivity; Stacking; Superlattices;
fLanguage
English
Publisher
ieee
Conference_Titel
Applications of Ferroelectrics, 2004. ISAF-04. 2004 14th IEEE International Symposium on
ISSN
1099-4734
Print_ISBN
0-7803-8410-5
Type
conf
DOI
10.1109/ISAF.2004.1418332
Filename
1418332
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