A Novel Parameter Extraction Method for HEMT Models by Using Generic Algorithms

This work reports an accurate, reliable, and systematic method to extract the small-signal equivalent-circuit elements of the high electron mobility transistor (HEMT) models by integrating the generic algorithm (GA) analyses. Superior extraction accuracy of 95% over the entire operation frequency range has been achieved. Different from the strong dependence on the starting value of parameter search by the conventional techniques, the proposed method sets the respective searching range with physical meanings by referring to the initial values. The proposed methodology can be applied to extracting different high-speed devices and is promisingly useful for the RFIC design technologies.