DocumentCode :
2980986
Title :
Dielectric properties of (Ba0.60,Sr0.40)TiO3 thin films on NdGaO3 substrates at 10 GHz
Author :
Simon, W.K. ; Akdogan, E.K. ; Belotti, J. ; Safari, A.
Author_Institution :
Dept. of Ceramic & Mater. Eng., Rutgers Univ., Piscataway, NJ, USA
fYear :
2004
fDate :
23-27 Aug. 2004
Firstpage :
47
Lastpage :
50
Abstract :
This work investigates the effects of anisotropic epitaxial strains on the microwave frequency dielectric response of BST (60/40) thin films. Dielectric properties such as permittivity and tunability along the <-110>, <-111> and <001> crystallographic directions correlate well with the variation of elastic strain energy as a function of film thickness. We demonstrate unequivocally that the maximum permittivity and tunability is obtained along a crystallographic direction where the strain is a minimum.
Keywords :
barium compounds; elastic deformation; epitaxial layers; ferroelectric materials; ferroelectric thin films; permittivity; strontium compounds; (Ba0.60Sr0.40)TiO3; 10 GHz; NdGaO3; anisotropic epitaxial strains; crystallographic direction; dielectric properties; elastic strain energy; microwave frequency dielectric response; permittivity; thin films; tunability; Anisotropic magnetoresistance; Barium; Binary search trees; Capacitive sensors; Crystallography; Dielectric substrates; Dielectric thin films; Permittivity; Pulsed laser deposition; Strontium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applications of Ferroelectrics, 2004. ISAF-04. 2004 14th IEEE International Symposium on
ISSN :
1099-4734
Print_ISBN :
0-7803-8410-5
Type :
conf
DOI :
10.1109/ISAF.2004.1418334
Filename :
1418334
Link To Document :
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