• DocumentCode
    2980986
  • Title

    Dielectric properties of (Ba0.60,Sr0.40)TiO3 thin films on NdGaO3 substrates at 10 GHz

  • Author

    Simon, W.K. ; Akdogan, E.K. ; Belotti, J. ; Safari, A.

  • Author_Institution
    Dept. of Ceramic & Mater. Eng., Rutgers Univ., Piscataway, NJ, USA
  • fYear
    2004
  • fDate
    23-27 Aug. 2004
  • Firstpage
    47
  • Lastpage
    50
  • Abstract
    This work investigates the effects of anisotropic epitaxial strains on the microwave frequency dielectric response of BST (60/40) thin films. Dielectric properties such as permittivity and tunability along the <-110>, <-111> and <001> crystallographic directions correlate well with the variation of elastic strain energy as a function of film thickness. We demonstrate unequivocally that the maximum permittivity and tunability is obtained along a crystallographic direction where the strain is a minimum.
  • Keywords
    barium compounds; elastic deformation; epitaxial layers; ferroelectric materials; ferroelectric thin films; permittivity; strontium compounds; (Ba0.60Sr0.40)TiO3; 10 GHz; NdGaO3; anisotropic epitaxial strains; crystallographic direction; dielectric properties; elastic strain energy; microwave frequency dielectric response; permittivity; thin films; tunability; Anisotropic magnetoresistance; Barium; Binary search trees; Capacitive sensors; Crystallography; Dielectric substrates; Dielectric thin films; Permittivity; Pulsed laser deposition; Strontium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applications of Ferroelectrics, 2004. ISAF-04. 2004 14th IEEE International Symposium on
  • ISSN
    1099-4734
  • Print_ISBN
    0-7803-8410-5
  • Type

    conf

  • DOI
    10.1109/ISAF.2004.1418334
  • Filename
    1418334
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2980986