Title :
Analytical Study of the DC Characteristics on the InAlAs/InGaAs Metamorphic HEMT with Oxidized InGaAs Gate
Author :
Lee, K.W. ; Huang, J.S. ; Lee, F.M. ; Huang, Y.S. ; Wang, Y.H. ; Su, S.C. ; Chao, B.H. ; Chen, C.C.
Author_Institution :
I-Shou Univ., Kaohsiung
Abstract :
The analytical model is developed to calculate the sheet carrier densities of InAlAs/InGaAs metal-oxide-semiconductor metamorphic high electron mobility transistor (MOS-MHEMT) with a thin InGaAs native oxide layer and conventional MHEMT structures. The electric field, potential, and sheet carrier density versus different position within the gate length are investigated for both structures.
Keywords :
MOSFET; electric field effects; gallium compounds; high electron mobility transistors; indium compounds; InAlAs; InGaAs; electric field; electric potential; metal-oxide-semiconductor metamorphic high electron mobility transistor; metamorphic HEMT; sheet carrier density; thin oxide layer; Analytical models; Charge carrier density; Doping; Electrons; HEMTs; Indium compounds; Indium gallium arsenide; Insulation; Leakage current; mHEMTs;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
Conference_Location :
Tainan
Print_ISBN :
978-1-4244-0637-1
Electronic_ISBN :
978-1-4244-0637-1
DOI :
10.1109/EDSSC.2007.4450111
