DocumentCode
2981018
Title
Analytical Study of the DC Characteristics on the InAlAs/InGaAs Metamorphic HEMT with Oxidized InGaAs Gate
Author
Lee, K.W. ; Huang, J.S. ; Lee, F.M. ; Huang, Y.S. ; Wang, Y.H. ; Su, S.C. ; Chao, B.H. ; Chen, C.C.
Author_Institution
I-Shou Univ., Kaohsiung
fYear
2007
fDate
20-22 Dec. 2007
Firstpage
259
Lastpage
262
Abstract
The analytical model is developed to calculate the sheet carrier densities of InAlAs/InGaAs metal-oxide-semiconductor metamorphic high electron mobility transistor (MOS-MHEMT) with a thin InGaAs native oxide layer and conventional MHEMT structures. The electric field, potential, and sheet carrier density versus different position within the gate length are investigated for both structures.
Keywords
MOSFET; electric field effects; gallium compounds; high electron mobility transistors; indium compounds; InAlAs; InGaAs; electric field; electric potential; metal-oxide-semiconductor metamorphic high electron mobility transistor; metamorphic HEMT; sheet carrier density; thin oxide layer; Analytical models; Charge carrier density; Doping; Electrons; HEMTs; Indium compounds; Indium gallium arsenide; Insulation; Leakage current; mHEMTs;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
Conference_Location
Tainan
Print_ISBN
978-1-4244-0637-1
Electronic_ISBN
978-1-4244-0637-1
Type
conf
DOI
10.1109/EDSSC.2007.4450111
Filename
4450111
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