Title :
A Floating RESURF EDMOS with Enhanced Ruggedness and Safe Operating Area
Author :
Wang, Hao ; Yoo, Abraham ; Xu, H. P Edward ; Ng, Wai Tung ; Fukumoto, Kenji ; Ishikawa, Akira ; Imai, Hisaya ; Sakai, Kimio ; Takasuka, Kaoru
Author_Institution :
Univ. of Toronto, Toronto
Abstract :
In this paper, a floating RESURF EDMOS (BV = 55 V, Ron,sp = 36.5 mOmegamiddotmm2) with 45% increased ruggedness and 400% enhanced safe operating area (SOA) is discussed and compared to the conventional EDMOS structure. The proposed EDMOS has both drain and source engineering to enhance device ruggedness, not only via reducing the base resistance of the parasitic bipolar transistor, but also suppressing the base current of the parasitic bipolar transistor at high VGS and high VDS situations, which will also improve the device SOA. Furthermore, the buried deep Nwell allow the device to have better tradeoff between breakdown voltage and on-resistance.
Keywords :
MOSFET; bipolar transistors; buried deep Nwell; device ruggedness; extended drain MOS transistor; floating RESURF EDMOS; parasitic bipolar transistor; safe operating area; undamped inductive switching; voltage 55 V; Avalanche breakdown; Bipolar transistors; Circuit testing; Driver circuits; MOSFETs; Power electronics; Roentgenium; Semiconductor optical amplifiers; Switching circuits; Voltage; EDMOS; Safe Operation Area (SOA); Unclamped Inductive Switching (UIS); floating RESURF; parasitic bipolar transistor;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
Conference_Location :
Tainan
Print_ISBN :
978-1-4244-0637-1
Electronic_ISBN :
978-1-4244-0637-1
DOI :
10.1109/EDSSC.2007.4450116
