Analysis of Radiation Damage on a Monolithic CMOS-MEMS Printhead

Author

Wang, Kuo-Jung ; Tseng, Fan-Chung ; Chen, Wei-Lin ; Shen, Guang-Ren ; Wang, Wai W. ; Lee, Kelvin

Author_Institution

BenQ Corp., Taoyuan

fYear

2007

fDate

20-22 Dec. 2007

Firstpage

293

Lastpage

295

Abstract

The failure mechanism of a monolithic CMOS-MEMS printhead has been thoroughly investigated. The E-beam Au-evaporation process induced radiation damage on the CMOS driving circuitry has been identified as the root cause of the printhead failure. This E-beam induced radiation damage causes severe leakage on the CMOS devices as well as a shift of threshold voltage to result in malfunctioning of printhead control circuitry. Appropriate annealing process that helps to alleviate the radiation damaged on MEMS printhead device is also reported.

Keywords

CMOS integrated circuits; annealing; laser beam effects; leakage currents; micromechanical devices; monolithic integrated circuits; Au-evaporation process induced radiation damage; CMOS devices; CMOS driving circuitry; annealing process; e-beam induced radiation damage; failure mechanism; monolithic CMOS-MEMS printhead; printhead control circuitry; printhead failure; threshold voltage; CMOS process; CMOS technology; Circuits; Fabrication; Failure analysis; Ink; Micromechanical devices; Printing; Resists; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on

Conference_Location

Tainan

Print_ISBN

978-1-4244-0637-1

Electronic_ISBN

978-1-4244-0637-1

Type

conf

DOI

10.1109/EDSSC.2007.4450120

Filename

4450120