Title :
Evaluation of recent technologies of non-volatile RAM
Author :
Nuns, T. ; Duzellier, S. ; Bertrand, J. ; Hubert, G. ; Pouget, V. ; Darracq, F. ; David, J.P. ; Soonckindt, S.
Author_Institution :
Dept. Environnement Spatial (DESP), ONERA, Toulouse, France
Abstract :
Two types of recent non-volatile random access memories (NVRAM) were evaluated for radiation effects: total dose and single event upset and latch-up under heavy ions and protons. Complementary irradiation with a laser beam provides information on sensitive areas of the devices.
Keywords :
radiation effects; random-access storage; heavy ions; non-volatile RAM; protons; radiation effects; recent technologies evaluation; Crystalline materials; EPROM; Ferroelectric films; Laser beams; Magnetoresistance; Manufacturing; Nonvolatile memory; Random access memory; Read-write memory; Space technology;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 2007. RADECS 2007. 9th European Conference on
Conference_Location :
Deauville
Print_ISBN :
978-1-4244-1704-9
DOI :
10.1109/RADECS.2007.5205525
