Title :
A single-chip 10 Gb/s transceiver LSI using SiGe SOI/BiCMOS
Author :
Ueno, S. ; Watanabe, K. ; Kato, T. ; Shinohara, T. ; Mikami, K. ; Hashimoto, T. ; Takai, A. ; Washio, K. ; Takeyari, R. ; Harada, T.
Author_Institution :
Device Dev. Center, Hitachi Ltd., Tokyo, Japan
Abstract :
A fully-integrated single-chip SiGe SOI/BiCMOS transceiver LSI for 10 Gb/s applications combines 4b FIFO, 10 GHz PLL, 16:1 MUX, 10 Gb/s input data decision circuit, clock and data-recovery circuit, 1:16 DeMUX, data loop back function, and self-testing using 2/sup 23/-1 PRBS generator. The die is 5.6/spl times/5.3 mm/sup 2/ and consumes 2.6 W from 3.3/2.5 V.
Keywords :
BiCMOS digital integrated circuits; Ge-Si alloys; SONET; low-power electronics; optical communication equipment; semiconductor materials; silicon-on-insulator; synchronisation; transceivers; 10 Gbit/s; 2.5 V; 2.6 W; 3.3 V; PRBS generator; SOI/BiCMOS; SiGe; clock and data-recovery circuit; data loop back function; input data decision circuit; self-testing; transceiver LSI; BiCMOS integrated circuits; Clocks; Frequency; Germanium silicon alloys; Large scale integration; Optical receivers; Optical resonators; Optical transmitters; Silicon germanium; Transceivers;
Conference_Titel :
Solid-State Circuits Conference, 2001. Digest of Technical Papers. ISSCC. 2001 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-6608-5
DOI :
10.1109/ISSCC.2001.912556
