Title :
The design and measurement of molecular electronic switches and memories
Author :
Reed, M.A. ; Chen, J. ; Price, D.W. ; Rawlett, A.M. ; Tour, J.M. ; Wang, W.
Author_Institution :
Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA
Abstract :
Molecular-scale devices have recently become possible with self-assembly techniques. Examples of a number of simple molecular devices and circuits include a negative-resistance device that exhibits peak-to-valley ratios exceeding 1000:1 and a molecular memory cell with refresh times exceeding 10 minutes.
Keywords :
cellular arrays; digital storage; molecular electronics; negative resistance devices; switches; molecular electronic switches; molecular memory cell; molecular-scale devices; negative-resistance device; peak-to-valley ratios; refresh times; self-assembly techniques; Chemical technology; Conductivity; Gold; Integrated circuit interconnections; Molecular electronics; Nanoscale devices; Physics; Self-assembly; Switches; Temperature;
Conference_Titel :
Solid-State Circuits Conference, 2001. Digest of Technical Papers. ISSCC. 2001 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-6608-5
DOI :
10.1109/ISSCC.2001.912566
