Strained Si surface channel MOSFETs for high-performance CMOS technology

Author

Rim, K.

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

fYear

2001

fDate

7-7 Feb. 2001

Firstpage

116

Lastpage

117

Abstract

Biaxial tension enhances in-plane transport of both electrons and holes in silicon, and can improve the current drive of CMOS devices independent of geometric scaling and electrostatic design. Device performance enhancements and issues to be addressed before the realization of strained Si CMOS technology are discussed.

Keywords

CMOS integrated circuits; MOSFET; electron mobility; elemental semiconductors; hole mobility; silicon; CMOSFET; Si; Si surface channel MOSFETs; biaxial tension; current drive; device performance enhancements; high-performance CMOS technology; in-plane transport enhancement; strained Si CMOS technology; strained Si surface channel; CMOS technology; Charge carrier processes; Electron mobility; Germanium silicon alloys; High definition video; MOSFET circuits; Predictive models; Silicon germanium; Strain control; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 2001. Digest of Technical Papers. ISSCC. 2001 IEEE International

Conference_Location

San Francisco, CA, USA

ISSN

0193-6530

Print_ISBN

0-7803-6608-5

Type

conf

DOI

10.1109/ISSCC.2001.912567

Filename

912567

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2981565