Title :
FinFET-a quasi-planar double-gate MOSFET
Author :
Tang, S.H. ; Chang, L. ; Lindert, N. ; Yang-Kyu Choi ; Wen-Chin Lee ; Xuejue Huang ; Subramanian, V. ; Bokor, J. ; Tsu-Jae King ; Chenming Hu
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
The quasi-planar FinFET structure has device characteristics similar to those of the conventional MOSFET. Inserting FinFET into CMOS technology requires no change in circuit architecture or layout/design tools, providing a smooth transition to post-planar CMOS technology. 2D mixed-mode simulations show FinFET circuit performance exceeds that of advanced single gate MOSFETs.
Keywords :
CMOS integrated circuits; MOSFET; 2D mixed-mode simulations; device characteristics; post-planar CMOS technology; quasi-planar FinFET structure; quasi-planar double-gate MOSFET; CMOS technology; Capacitance; Circuit simulation; Dielectrics; Electrodes; FinFETs; Leakage current; MOSFET circuits; Manufacturing processes; Medical simulation;
Conference_Titel :
Solid-State Circuits Conference, 2001. Digest of Technical Papers. ISSCC. 2001 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-6608-5
DOI :
10.1109/ISSCC.2001.912568
