DocumentCode :
2981603
Title :
Ultra-miniature high-Q filters and duplexers using FBAR technology
Author :
Ruby, R. ; Bradley, P. ; Larson, J., III ; Oshmyansky, Y. ; Figueredo, D.
Author_Institution :
Agilent Technol. Inc., Newark, CA, USA
fYear :
2001
fDate :
7-7 Feb. 2001
Firstpage :
120
Lastpage :
121
Abstract :
An ultra-miniature PCS duplexer uses thin-film bulk wave acoustic resonator (FBAR) technology. FBAR resonators are made using aluminum nitride for the piezoelectric material and silicon as the substrate. It has better than -52 dB rejection for the receive (Rx) filter in the transmit (Tx) band and pass-band insertion losses are on the order of 2 dB (Tx) and 3 dB (Rx). Performance is comparable to that of much larger ceramic duplexers.
Keywords :
Q-factor; UHF filters; acoustic resonator filters; aluminium compounds; antenna accessories; bulk acoustic wave devices; mobile radio; passive filters; thin film devices; 1900 MHz; AlN; AlN piezoelectric material; FBAR technology; PCS band operation; Si; Si substrate; UHF band; high-Q filters; thin-film bulk wave acoustic resonator technology; ultra-miniature PCS duplexer; Acoustic waves; Aluminum nitride; Band pass filters; Film bulk acoustic resonators; Personal communication networks; Piezoelectric films; Piezoelectric materials; Resonator filters; Silicon; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference, 2001. Digest of Technical Papers. ISSCC. 2001 IEEE International
Conference_Location :
San Francisco, CA, USA
ISSN :
0193-6530
Print_ISBN :
0-7803-6608-5
Type :
conf
DOI :
10.1109/ISSCC.2001.912569
Filename :
912569
Link To Document :
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