Ultra-miniature high-Q filters and duplexers using FBAR technology

Author

Ruby, R. ; Bradley, P. ; Larson, J., III ; Oshmyansky, Y. ; Figueredo, D.

Author_Institution

Agilent Technol. Inc., Newark, CA, USA

fYear

2001

fDate

7-7 Feb. 2001

Firstpage

120

Lastpage

121

Abstract

An ultra-miniature PCS duplexer uses thin-film bulk wave acoustic resonator (FBAR) technology. FBAR resonators are made using aluminum nitride for the piezoelectric material and silicon as the substrate. It has better than -52 dB rejection for the receive (Rx) filter in the transmit (Tx) band and pass-band insertion losses are on the order of 2 dB (Tx) and 3 dB (Rx). Performance is comparable to that of much larger ceramic duplexers.

Keywords

Q-factor; UHF filters; acoustic resonator filters; aluminium compounds; antenna accessories; bulk acoustic wave devices; mobile radio; passive filters; thin film devices; 1900 MHz; AlN; AlN piezoelectric material; FBAR technology; PCS band operation; Si; Si substrate; UHF band; high-Q filters; thin-film bulk wave acoustic resonator technology; ultra-miniature PCS duplexer; Acoustic waves; Aluminum nitride; Band pass filters; Film bulk acoustic resonators; Personal communication networks; Piezoelectric films; Piezoelectric materials; Resonator filters; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 2001. Digest of Technical Papers. ISSCC. 2001 IEEE International

Conference_Location

San Francisco, CA, USA

ISSN

0193-6530

Print_ISBN

0-7803-6608-5

Type

conf

DOI

10.1109/ISSCC.2001.912569

Filename

912569