DocumentCode
2981736
Title
SEB characterisation of commercial power MOSFETs with backside laser and heavy ions of different ranges
Author
Luu, A. ; Miller, F. ; Poirot, P. ; Gaillard, R. ; Buard, N. ; Carrière, T. ; Austin, P. ; Bafleur, M. ; Sarrabayrouse, G.
Author_Institution
Innovation Work, Eur. Aeronaut. Defence & Space Co., Suresnes, France
fYear
2007
fDate
10-14 Sept. 2007
Firstpage
1
Lastpage
7
Abstract
This paper presents a validation of the methodology based upon backside laser irradiations to characterize the sensitivity of power devices towards single-event burnout. This is done thanks to high-energy heavy ion testing and device simulations.
Keywords
lasers; power MOSFET; SEB characterisation; backside laser; commercial power MOSFET; device simulation; energy heavy ion testing; high-energy heavy ion testing; single-event burnout; Guidelines; Laboratories; MOSFETs; Power lasers; Power supplies; Protons; Random access memory; Temperature; Testing; Voltage; SEB; commercial power MOSFETs; heavy ion tests; laser tests; software simulations;
fLanguage
English
Publisher
ieee
Conference_Titel
Radiation and Its Effects on Components and Systems, 2007. RADECS 2007. 9th European Conference on
Conference_Location
Deauville
ISSN
0379-6566
Print_ISBN
978-1-4244-1704-9
Type
conf
DOI
10.1109/RADECS.2007.5205543
Filename
5205543
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