DocumentCode
2981760
Title
The electrical characteristics of the (Ba0.7Sr0.3)(Ti0.9Zr0.1)O3 thin film using oxygen plasma surface treatment
Author
Chen, Kai-Huang ; Chang, Chia-How ; Chen, Ying-Chung ; Wang, Chih-Ming
Author_Institution
Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
fYear
2004
fDate
23-27 Aug. 2004
Firstpage
173
Lastpage
176
Abstract
In this work, the effects of plasma surface treatment, using oxygen gas, of Ba0.7Sr0.3Ti0.9Zr0.1O3 (BSTZ) film on the electrical characteristic of a Al/BSTZ/Pt capacitor structure were investigated in detail. Experiment results showed that the leakage current density of the BSTZ thin film within oxygen plasma treatment was decreased as much as three times in magnitude, as compared to that of the BSTZ film without oxygen plasma treatment. In addition, the dielectric constant of BSTZ film was increased from 190 to 260 within oxygen plasma treatment. These results clearly indicated that the electrical characteristics of BSTZ film were improved effectively within oxygen plasma surface treatment.
Keywords
aluminium; barium compounds; ferroelectric thin films; interface structure; leakage currents; permittivity; plasma materials processing; platinum; strontium compounds; surface treatment; Al-Ba0.7Sr0.3Ti0.9Zr0.1O3 -Pt; capacitor structure; dielectric constant; electrical characteristics; leakage current density; oxygen plasma surface treatment; thin film; Capacitors; Dielectric constant; Dielectric thin films; Electric variables; Leakage current; Plasma density; Plasma properties; Strontium; Surface treatment; Zirconium;
fLanguage
English
Publisher
ieee
Conference_Titel
Applications of Ferroelectrics, 2004. ISAF-04. 2004 14th IEEE International Symposium on
ISSN
1099-4734
Print_ISBN
0-7803-8410-5
Type
conf
DOI
10.1109/ISAF.2004.1418364
Filename
1418364
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