Title :
Electron microscopic and X-ray diffraction investigations of nanostructured thin films of ZnO
Author :
Bahadur, Harish ; Srivastava, A.K. ; Kishore, Ram ; Rashmi ; Chandra, Sudhir
Author_Institution :
Nat. Phys. Lab., New Delhi, India
Abstract :
ZnO films prepared by sol-gel technique using zinc nitrate and zinc acetate as precursor material have been studied using transmission electron microscopy (TEM) and X-ray diffraction (XRD) techniques. The results show the formation of zinc oxide phase. The nanostructure of the films was studied by transmission electron microscopy. Nano-structured fine grains of size ranging from 20-60 nm were observed with zinc nitrate precursor film. Individual grains show a sharp contrast with different facets and boundaries. Films prepared by zinc acetate precursor show ultra-fine nano-grains in the shape of dendrites as seen by the TEM. XRD shows a larger size of crystallites with the zinc acetate precursor. Crystal planes and lattice parameters calculated by both electron diffraction and X-ray diffraction are quite close and in agreement with the reported values in literature.
Keywords :
II-VI semiconductors; X-ray diffraction; crystallites; dendrites; electron diffraction; grain boundaries; grain size; lattice constants; nanostructured materials; semiconductor growth; semiconductor thin films; sol-gel processing; transmission electron microscopy; wide band gap semiconductors; zinc compounds; 20 to 60 nm; TEM; XRD; ZnO; boundaries; crystal planes; crystallites; dendrites; electron diffraction; lattice parameters; nanostructured fine grains; nanostructured thin films; sol-gel technique; ultrafine nanograins; Crystallization; Electron microscopy; Lattices; Nanostructured materials; Shape; Transistors; Transmission electron microscopy; X-ray diffraction; X-ray scattering; Zinc oxide;
Conference_Titel :
Applications of Ferroelectrics, 2004. ISAF-04. 2004 14th IEEE International Symposium on
Print_ISBN :
0-7803-8410-5
DOI :
10.1109/ISAF.2004.1418367