CMOS Low-Noise Amplifier for Mode-C & Mode-D MB-OFDM UWB Wireless Receiver

Author

Huang, Zhe-Yang ; Huang, Che-Cheng ; Chen, Chun-Chieh ; Hung, Chung-Chih

Author_Institution

Nat. Chiao Tung Univ., Hsinchu

fYear

2007

fDate

20-22 Dec. 2007

Firstpage

429

Lastpage

432

Abstract

This paper presents a low-power low-noise amplifier (LNA) with switching bands for MB-OFDM group-C and group-D ultra-wideband wireless radio system. The LNA is designed and implemented in TSMC 0.18 um RF CMOS process. Simulation results show that power gain of 12.4 dB, input and output matching lower then -8.5 dB and -14.5 dB, and a minimum NF of 4.0 dB can be achieved, while the power consumption is 11.2 mW through 1.8 V power supply.

Keywords

CMOS integrated circuits; OFDM modulation; low noise amplifiers; low-power electronics; radio receivers; radiofrequency amplifiers; radiofrequency integrated circuits; ultra wideband communication; CMOS low-noise amplifier; TSMC RF process; mode-C & mode-D MB-OFDM UWB receiver; power 11.2 mW; size 0.18 mum; ultra wideband wireless radio system; voltage 1.8 V; CMOS process; Energy consumption; Gain; Impedance matching; Low-noise amplifiers; Noise measurement; Power supplies; Radio frequency; Receivers; Ultra wideband technology;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on

Conference_Location

Tainan

Print_ISBN

978-1-4244-0637-1

Electronic_ISBN

978-1-4244-0637-1

Type

conf

DOI

10.1109/EDSSC.2007.4450154

Filename

4450154