DocumentCode :
2981836
Title :
CMOS Low-Noise Amplifier for Mode-C & Mode-D MB-OFDM UWB Wireless Receiver
Author :
Huang, Zhe-Yang ; Huang, Che-Cheng ; Chen, Chun-Chieh ; Hung, Chung-Chih
Author_Institution :
Nat. Chiao Tung Univ., Hsinchu
fYear :
2007
fDate :
20-22 Dec. 2007
Firstpage :
429
Lastpage :
432
Abstract :
This paper presents a low-power low-noise amplifier (LNA) with switching bands for MB-OFDM group-C and group-D ultra-wideband wireless radio system. The LNA is designed and implemented in TSMC 0.18 um RF CMOS process. Simulation results show that power gain of 12.4 dB, input and output matching lower then -8.5 dB and -14.5 dB, and a minimum NF of 4.0 dB can be achieved, while the power consumption is 11.2 mW through 1.8 V power supply.
Keywords :
CMOS integrated circuits; OFDM modulation; low noise amplifiers; low-power electronics; radio receivers; radiofrequency amplifiers; radiofrequency integrated circuits; ultra wideband communication; CMOS low-noise amplifier; TSMC RF process; mode-C & mode-D MB-OFDM UWB receiver; power 11.2 mW; size 0.18 mum; ultra wideband wireless radio system; voltage 1.8 V; CMOS process; Energy consumption; Gain; Impedance matching; Low-noise amplifiers; Noise measurement; Power supplies; Radio frequency; Receivers; Ultra wideband technology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Solid-State Circuits, 2007. EDSSC 2007. IEEE Conference on
Conference_Location :
Tainan
Print_ISBN :
978-1-4244-0637-1
Electronic_ISBN :
978-1-4244-0637-1
Type :
conf
DOI :
10.1109/EDSSC.2007.4450154
Filename :
4450154
Link To Document :
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