Title :
A 1.5 W class-F RF power amplifier in 0.2 /spl mu/m CMOS technology
Author :
Kuo, T.C. ; Lusignan, B.
Author_Institution :
Philips Semicond., San Jose, CA, USA
Abstract :
Design considerations for deep-sub-micron RF CMOS power amplifier emphasize high knee voltage design and CMOS breakdown. A square-wave driver takes advantage of CMOS. In 0.2 /spl mu/m CMOS, the 1/spl times/2 mm/sup 2/ PA delivers 1.5 W output at 900 MHz with 43% PAE from a 3 V supply.
Keywords :
CMOS analogue integrated circuits; UHF integrated circuits; UHF power amplifiers; 0.2 micron; 1.5 W; 3 V; 43 percent; 900 MHz; breakdown voltage; class-F RF power amplifier; deep-sub-micron CMOS technology; knee voltage; square-wave driver; Breakdown voltage; CMOS technology; Driver circuits; Equations; Power amplifiers; Power generation; Power transistors; Radio frequency; Radiofrequency amplifiers; Resistors;
Conference_Titel :
Solid-State Circuits Conference, 2001. Digest of Technical Papers. ISSCC. 2001 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-6608-5
DOI :
10.1109/ISSCC.2001.912583
