Title :
Radiation effects on MRAM
Author :
Nguyen, D.N. ; Irom, Farokh
Author_Institution :
Propulsion Lab., Pasadena, CA, USA
Abstract :
We report on SEL and TID tests of a magnetoresistive random access memory (MRAM). Single event latch-up was observed with a static configuration. Insitu irradiations were used to characterize the response of the total accumulated dose failures.
Keywords :
MRAM devices; MRAM; SEL tests; TID tests; magnetoresistive random access memory; radiation effects; single event latch-up; total accumulated dose failures; CMOS technology; Magnetic separation; Magnetic shielding; Magnetic tunneling; Magnetoresistance; Polarization; Radiation effects; Random access memory; Switches; Testing; In-situ; MRAM; Radiation; SEL; TID;
Conference_Titel :
Radiation and Its Effects on Components and Systems, 2007. RADECS 2007. 9th European Conference on
Conference_Location :
Deauville
Print_ISBN :
978-1-4244-1704-9
DOI :
10.1109/RADECS.2007.5205554
