• DocumentCode
    2981938
  • Title

    Radiation effects on MRAM

  • Author

    Nguyen, D.N. ; Irom, Farokh

  • Author_Institution
    Propulsion Lab., Pasadena, CA, USA
  • fYear
    2007
  • fDate
    10-14 Sept. 2007
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    We report on SEL and TID tests of a magnetoresistive random access memory (MRAM). Single event latch-up was observed with a static configuration. Insitu irradiations were used to characterize the response of the total accumulated dose failures.
  • Keywords
    MRAM devices; MRAM; SEL tests; TID tests; magnetoresistive random access memory; radiation effects; single event latch-up; total accumulated dose failures; CMOS technology; Magnetic separation; Magnetic shielding; Magnetic tunneling; Magnetoresistance; Polarization; Radiation effects; Random access memory; Switches; Testing; In-situ; MRAM; Radiation; SEL; TID;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation and Its Effects on Components and Systems, 2007. RADECS 2007. 9th European Conference on
  • Conference_Location
    Deauville
  • ISSN
    0379-6566
  • Print_ISBN
    978-1-4244-1704-9
  • Type

    conf

  • DOI
    10.1109/RADECS.2007.5205554
  • Filename
    5205554
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2981938