• DocumentCode
    2981949
  • Title

    Heavy ion SEE studies on 4-Gbit NAND-Flash memories

  • Author

    Schmidt, H. ; Walter, D. ; Bruggemann, M. ; Gliem, F. ; Harboe-Sorensen, R. ; Virtanen, A.

  • Author_Institution
    IDA, Tech. Univ. Braunschweig, Braunschweig, Germany
  • fYear
    2007
  • fDate
    10-14 Sept. 2007
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Heavy ion SEE studies on three 4-Gbit NAND-flash memory types were performed at the RADEF facility at the University of Jyvaskyla, Finland with particular emphasis on SEFI differentiation. An error classification for complex memory devices is introduced, and respective cross sections are reported.
  • Keywords
    NAND circuits; flash memories; NAND-flash memories; SEFI differentiation; complex memory devices; error classification; heavy ion; storage capacity 4 Gbit; Communication system control; Control systems; Displays; Electronic equipment testing; Error correction; Radiation effects; Space technology; System testing; Test equipment; Weight control; Floating Gate memories; Heavy-Ion; Radiation effects;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation and Its Effects on Components and Systems, 2007. RADECS 2007. 9th European Conference on
  • Conference_Location
    Deauville
  • ISSN
    0379-6566
  • Print_ISBN
    978-1-4244-1704-9
  • Type

    conf

  • DOI
    10.1109/RADECS.2007.5205555
  • Filename
    5205555
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2981949