Title :
A 1 W 0.35 /spl mu/m CMOS power amplifier for GSM-1800 with 45% PAE
Author :
Fallesen, C. ; Asbeck, P.
Author_Institution :
Nokia Denmark A/S, Copenhagen, Denmark
Abstract :
A highly-integrated power amplifier in 0.35 /spl mu/m CMOS occupies 1.9 mm/sup 2/ and features class AB operation with 31.2 dBm output power at 1730 MHz, and 45% maximum power added efficiency.
Keywords :
CMOS analogue integrated circuits; UHF integrated circuits; UHF power amplifiers; cellular radio; 0.35 micron; 1 W; 1730 MHz; 45 percent; CMOS power amplifier; GSM-1800; class AB operation; output power; power added efficiency; wireless communication; CMOS process; Capacitors; Costs; Frequency; High power amplifiers; Impedance matching; Inductors; Power amplifiers; Power generation; Power measurement;
Conference_Titel :
Solid-State Circuits Conference, 2001. Digest of Technical Papers. ISSCC. 2001 IEEE International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-6608-5
DOI :
10.1109/ISSCC.2001.912585
