Title :
Detection of a gaseous organophosphorus compound using a supported copper + cuprous oxide island film
Author :
Kolesar, Edward S.
Author_Institution :
US Air Force Inst. of Technol., Wright-Patterson AFB, OH, USA
Abstract :
The modification of electronic properties of a dielectric-supported island film of copper plus cuprous oxide that is exposed to small concentrations (ppm levels) of diisopropyl methylphosphonate (DIMP) is reported. Electron microscopy and electron diffraction measurements confirmed the film´s structure and composition. Auger spectroscopy verified the absorption of DIMP. Isothermal direct current measurements suggest a space-charge conduction mechanism whereby carriers are thermally excited, field induced, and transported via shallow trapping and impurity centers
Keywords :
chemical variables measurement; copper; copper compounds; electric sensing devices; Auger spectroscopy; Cu-Cu2O film; DIMP; absorption of DIMP; dielectric-supported island film; diisopropyl methylphosphonate; electron diffraction measurements; electron microscopy; gas detectors; gas sensors; gaseous organophosphorus compound; isothermal DC current measurements; modification of electronic properties; operation; small concentrations; space-charge conduction mechanism; Absorption; Copper; Current measurement; Dielectric films; Dielectric measurements; Diffraction; Electron microscopy; Isothermal processes; Spectroscopy; Thermal conductivity;
Conference_Titel :
Aerospace and Electronics Conference, 1988. NAECON 1988., Proceedings of the IEEE 1988 National
Conference_Location :
Dayton, OH
DOI :
10.1109/NAECON.1988.194986
