High-Performance Carbon Nanotube Field-Effect Transistors Using Low-Energy Ion Implantation

The authors have investigated the effect of channel doping by low-energy ion implantation in carbon nanotube field-effect transistors (CNTFETs) with passivation films. Single-walled carbon nanotubes (SWNTs) are promising candidates for fabricating nano-electronic applications due to ideal one-dimensional structures. In particular, CNTFETs using semiconducting SWNTs as a channel are expected for high-sensitive biosensors and gas sensors. However, it is necessary to reduce the contact and channel resistance to fabricate high-performance FETs. In this abstract, we have succeeded in improving transport properties of CNTFETs using low-energy ion implantation techniques.