Title :
Self-Aligned, Emitter-Edge-Passivated AIGaAs/GaAs Heterojunction Bipolar Transistors with Extrapolated Maximum Oscillation Frequency of 350 GHz
Author :
Ho, W.J. ; Wang, N.L. ; Chang, M.F. ; Sailer, A. ; Higgins, J.A.
Author_Institution :
Rockwell International Science Center
Keywords :
Capacitance; Etching; Fingers; Frequency; Gain measurement; Gallium arsenide; Global warming; Heterojunction bipolar transistors; Microwave devices; Protons;
Conference_Titel :
Device Research Conference, 1992. Digest. 50th Annual
Conference_Location :
Cambridge, MA, USA
DOI :
10.1109/DRC.1992.671880
